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                             BYR29X-800 All information provided in this document is subject to legal disclaimers. ? NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 12 July 2010 5 of 12 NXP Semiconductors BYR29X-800 Ultrafast power diode 6. Isolation characteristics 7. Characteristics Table 6. Isolation characteristics Symbol Parameter Conditions Min Typ Max Unit Visol(RMS) RMS isolation voltage 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; from all pins to external heatsink; sinusoidal waveform; clean and dust free - - 2500 V Cisol isolation capacitance f = 1 MHz ; from cathode to external heatsink -10-pF Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics VF forward voltage IF =8A; Tj = 150 °C; see Figure 5 - 1.07 1.5 V IF =20A; Tj = 25 °C; see Figure 5 - 1.75 1.95 V IF =8A; Tj = 25 °C; see Figure 5 --1.7V IR reverse current VR =800V; Tj =25°C - 1 10 μA VR =800V; Tj = 100 °C - 0.1 0.2 mA Dynamic characteristics Qr recovered charge IF =2A; VR =30V; dIF/dt = 20 A/s; Tj =25°C; see Figure 6; see Figure 7 - 150 200 nC trr reverse recovery time IF =1A; VR =30V; dIF/dt = 100 A/μs; Tj =25°C; see Figure 8; see Figure 7 - 6075ns IRM peak reverse recovery IF =10A; VR =30V; dIF/dt = 50 A/μs; current Tj = 100 °C; see Figure 9; see Figure 7 --6A VFR forward recovery voltage IF =10A; dIF/dt = 10 A/μs; Tj =25°C; see Figure 10 -5-V |